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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION www.DataSheet4U.com CMBD914 SOT-23 Absolute Maximum Ratings (Ta=25°C) ITEMS Symbol Ratings Unit Reverse Voltage VR 75 V Reverse trr 4 ns Recovery Time Forward Voltage VF 1.0 V @ If = 10 mA Forward Current IF 200 mA Junction Temp. Tj -55 to 150 °C Storage Temp. Tstg -55 to 150 °C Mechanical Data ITEMS Material.
26) 330-6296 www.rectron.com .
CMBD914 - Rectron Semiconductor
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION www.DataSheet4U.com CMBD914 SOT-23 Absolute Maximum Ratings (Ta=25°C) .
CMBD914 - Rectron Semiconductor
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION www.DataSheet4U.com CMBD914 SOT-23 Absolute Maximum Ratings (Ta=25°C) .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CMBD914N3 |
Cystech Electonics |
High -Speed switching diode |
|
| 2 | CMBD99 |
Continental Device India Limited |
SILICON EPITAXIAL GENERAL SWITCHING DIODE |
|
| 3 | CMBD99 |
Continental Device India Limited |
SILICON EPITAXIAL GENERAL SWITCHING DIODE |
|
| 4 | CMBD1201 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|
| 5 | CMBD1201 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|
| 6 | CMBD1202 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|
| 7 | CMBD1202 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|
| 8 | CMBD1203 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|
| 9 | CMBD1203 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|
| 10 | CMBD1204 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|
| 11 | CMBD1204 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|
| 12 | CMBD1205 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|