CMBD1201 - Continental Device India Limited

CMBD1201 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBD1201, CMBD1202, CMBD1203 CMBD1204, CMBD1205, CMBD4148 www.DataSheet4U.com SILICON PLANAR EPITAXIAL HIGH SPEED DIODES CMBD1201, 1202, CMBD4148 are all single diodes CMBD1203 is a dual diode, in series CMBD1204 is a dual diode, common cathode CMBD12.

Features

CMBD1201, CMBD1202, CMBD1203 CMBD1204, CMBD1205, CMBD4148 Reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA RATINGS (per diode) (at TA = 25°C unless otherwise Limiting values Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current (per crystal) t = 1 µs t = 1 ms t=1s Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient CHARACTERISTICS (per diode) Tj = 25 °C unless otherwise specified Forward voltage IF = 10 mA IF = 200 mA CM.