MITSUBISHI IGBT MODULES CM100DU-24NFH HIGH POWER SWITCHING USE CM100DU-24NFH ¡IC ....... 100A ¡VCES ............ 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heati.
ipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C
*4
Conditions
(Note 2) (Note 2) (Note 2) (Note 2)
Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value
Ratings 1200 ±20 100 200 100 200 560 730
–40 ~ +150
–40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310
Unit V V A A A A W W °C °C V N
•m N
•m g
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Not.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CM100DU-24F |
Powerex Power Semiconductors |
IGBT Module | |
2 | CM100DU-24H |
Mitsubishi Electric Semiconductor |
IGBT MODULES | |
3 | CM100DU-24H |
Powerex Power Semiconductors |
Dual IGBT Module | |
4 | CM100DU-12F |
Powerex Power Semiconductors |
IGBT Module | |
5 | CM100DU-12H |
Mitsubishi Electric Semiconductor |
IGBT MODULES | |
6 | CM100DU-12H |
Powerex Power Semiconductors |
Dual IGBT Module | |
7 | CM100DU-34KA |
Powerex Power Semiconductors |
Dual IGBT Module | |
8 | CM100DU-34KA |
Mitsubishi Electric |
IGBT MODULES | |
9 | CM100DUS-12F |
Mitsubishi Electric Semiconductor |
IGBT MODULES | |
10 | CM100DC-24NFM |
Mitsubishi Electric |
IGBT Module | |
11 | CM100DY |
Mitsubishi Electric Semiconductor |
IGBT Module | |
12 | CM100DY-12H |
Mitsubishi Electric Semiconductor |
IGBT Module |