Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and therma.
□ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100DU-24H is a 1200V (VCES), 100 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 100 V CES Volts (x 50) 24 G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 3.7 1.89 3.15± 0.01 0.43 0.16 0.71 0.02 Milli.
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bri.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CM100DU-24F |
Powerex Power Semiconductors |
IGBT Module | |
2 | CM100DU-24NFH |
Mitsubishi Electric Semiconductor |
IGBT MODULES | |
3 | CM100DU-12F |
Powerex Power Semiconductors |
IGBT Module | |
4 | CM100DU-12H |
Mitsubishi Electric Semiconductor |
IGBT MODULES | |
5 | CM100DU-12H |
Powerex Power Semiconductors |
Dual IGBT Module | |
6 | CM100DU-34KA |
Powerex Power Semiconductors |
Dual IGBT Module | |
7 | CM100DU-34KA |
Mitsubishi Electric |
IGBT MODULES | |
8 | CM100DUS-12F |
Mitsubishi Electric Semiconductor |
IGBT MODULES | |
9 | CM100DC-24NFM |
Mitsubishi Electric |
IGBT Module | |
10 | CM100DY |
Mitsubishi Electric Semiconductor |
IGBT Module | |
11 | CM100DY-12H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
12 | CM100DY-12H |
Powerex Power Semiconductors |
Dual IGBT Module |