CJD200 - Central Semiconductor

CJD200 NPN POWER TRANSISTOR

The CENTRAL SEMICONDUCTOR CJD200 and CJD210 are complementary silicon power transistors manufactured in a surface mount package designed for high current amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V .

Features

25°C 100 µA IEBO VEB=8.0V 100 nA BVCEO IC=10mA 25 V VCE(SAT) IC=500mA, IB=50mA 0.3 V VCE(SAT) IC=2.0A, IB=200mA 0.75 V VCE(SAT) IC=5.0A, IB=1.0A 1.8 V VBE(SAT) IC=5.0A, IB=1.0A 2.5 V VBE(ON) VCE=1.0V, IC=2.0A 1.6 V hFE VCE=1.0V, IC=500mA 70 hFE VCE=1.0V, IC=2.0A 45 180 hFE VCE=2.0V, IC=5.0A 10 fT VCE=10V, IC=100mA, f=10MHz 65 MHz Cob VCB=10V, IE=0, f=0.1MHz (CJD200) 80 pF Cob VCB=10V, IE=0, f=0.1MHz (CJD210) 120 pF R4 (22-August 2023) CJD200 NPN CJD210 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DPAK C.