CEV2309 - CET

CEV2309 P-Channel MOSFET

CEV2309 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -1.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-323 package. D DS G SOT-323(SC-70) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise no.

Features

-20V, -1.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-323 package. D DS G SOT-323(SC-70) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -20 VGS ±8 ID -1.2 IDM -4.8 Maximum Power Dissipation PD 0.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient.