CED12P15/CEU12P15 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -150V, -12A, RDS(ON) = 0.24Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK).
-150V, -12A, RDS(ON) = 0.24Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage(Typ) Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -150 ±20 -12 -48 60 0.48 Single Pulsed Avalanche Energy e EAS 250 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU12P10 |
CET |
P-Channel MOSFET | |
2 | CEU121J |
Mallory |
Disc Ceramic Capacitors | |
3 | CEU12N10 |
CET |
N-Channel MOSFET | |
4 | CEU12N10L |
Chino-Excel Technology |
N-Channel MOSFET | |
5 | CEU100D |
Mallory |
Disc Ceramic Capacitors | |
6 | CEU1012 |
CET |
N-Channel MOSFET | |
7 | CEU1012L |
CET |
N-Channel MOSFET | |
8 | CEU101J |
Mallory |
Disc Ceramic Capacitors | |
9 | CEU10P10 |
Chino-Excel Technology |
P-Channel MOSFET | |
10 | CEU110P03 |
CET |
P-Channel MOSFET | |
11 | CEU1185 |
CET |
N-Channel MOSFET | |
12 | CEU11P20 |
CET |
P-Channel MOSFET |