CES2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 62mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol L.
-20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 62mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -3.8 IDM -15.2 Maximum Power Dissipation PD 1.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Sym.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CES2320 |
CET |
N-Channel MOSFET | |
2 | CES2321A |
CET |
P-Channel MOSFET | |
3 | CES2323 |
Chino-Excel Technology |
P-Channel MOSFET | |
4 | CES2324 |
Chino-Excel Technology |
N-Channel MOSFET | |
5 | CES2301 |
CET |
P-Channel MOSFET | |
6 | CES2302 |
Chino-Excel Technology |
N-Channel MOSFET | |
7 | CES2303 |
Chino-Excel Technology |
P-Channel MOSFET | |
8 | CES2304 |
CET |
N-Channel MOSFET | |
9 | CES2305 |
Chino-Excel Technology |
P-Channel MOSFET | |
10 | CES2306 |
CET |
N-Channel MOSFET | |
11 | CES2307 |
Chino-Excel Technology |
P-Channel MOSFET | |
12 | CES2307A |
CET |
P-Channel MOSFET |