CEP71A3 - CET

CEP71A3 N-Channel MOSFET

CEP71A3/CEB71A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 70A,RDS(ON) = 7.5mΩ @VGS = 10V. RDS(ON) = 10.5mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G .

Features

30V, 70A,RDS(ON) = 7.5mΩ @VGS = 10V. RDS(ON) = 10.5mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 70 210 65 0.53 Operating and Store Temperature Rang.