CEP703AL/CEB703AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G .
30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 40 120 50 0.4 Operating and Store Temperature Range .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP703ALS2 |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
2 | CEP7030L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
3 | CEP7050 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
4 | CEP7050L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
5 | CEP7060 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
6 | CEP7060L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | CEP7060LR |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | CEP7060R |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
9 | CEP70N06 |
CET |
N-Channel MOSFET | |
10 | CEP70N10 |
CET |
N-Channel MOSFET | |
11 | CEP71A3 |
CET |
N-Channel MOSFET | |
12 | CEP72A3 |
CET |
N-Channel MOSFET |