Technical Data : CD-028 PST Page 1 of 3 C648 - Power Thyristor 500 - 1400 VDRM; 1000 A rms ********************************************************************************************************** HIGH POWER THYRISTOR FOR INVERTER AND CHOPPER APPLICATIONS Features: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capab.
. All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 1400 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) C648E 500 500 600 C648M 600 600 720 C648N 800 800 960 C648P 1000 1000 1150 C648PB 1200 1200 1300 C648PD 1400 1400 1500 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse lea.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C640 |
ETC |
NPN Silicon Transistor | |
2 | C6-K |
Mitsumi Electronics |
Power Inductors | |
3 | C6000 |
Toshiba Semiconductor |
2SC6000 | |
4 | C6010 |
Toshiba |
2SC6010 | |
5 | C6011 |
Allegro |
2SC6011 | |
6 | C6012 |
Panasonic Semiconductor |
2SC6012 | |
7 | C6017 |
Sanyo Semicon Device |
2SC6017 | |
8 | C6019 |
Sanyo Semicon Device |
2SC6019 | |
9 | C6025 |
Sanyo |
NPN Epitaxial Planar Silicon Transistor | |
10 | C6040 |
Toshiba Semiconductor |
2SC6040 | |
11 | C6042 |
Toshiba Semiconductor |
2SC6042 | |
12 | C6045 |
Panasonic |
Silicon NPN Transistor |