C640 - ETC

C640 NPN Silicon Transistor

2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2..

Features

Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA at f=1KHz, RS=500Ω NF 4 dB COB 2.5 pF fT 300 MHz VCE(sat) 0.15 0.3 V IEBO 0.1 μA ICBO 0.1 μA V(BR)EBO 5 V V(BR)CEO 30 V V(BR)CBO 40 V hFE hFE hFE hFE hFE 40 70 120 200 350 80 140 240 400 700 Symbol Min. Typ. Max. Unit Page 2 of 2 7/15/2011 Free Datasheet http://www.nDatasheet.com .