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Ordering number : ENN7398 2SC5723 NPN Triple Diffused Planar Silicon Transistor 2SC5723 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2048B [2SC5723] 6.0 20.0 3.3 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT proces.
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Package Dimensions
unit : mm 2048B
[2SC5723]
6.0
20.0 3.3 5.0
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process.
26.0
2.0 3.4
20.7
2.0
1.0
0.6 1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions
2.8
1
2
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C572 |
Toshiba Semiconductor |
2SC572 |
|
| 2 | C5720 |
Toshiba Semiconductor |
2SC5720 |
|
| 3 | C5702 |
Renesas |
2SC5702 |
|
| 4 | C5703 |
Toshiba Semiconductor |
2SC5703 |
|
| 5 | C5706 |
Sanyo Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistor |
|
| 6 | C5706 |
ON Semiconductor |
Bipolar Transistor |
|
| 7 | C5707 |
Sanyo Semicon Device |
2SC5707 |
|
| 8 | C5709 |
Sanyo Semicon Device |
2SC5709 |
|
| 9 | C5738 |
Toshiba Semiconductor |
2SC5738 |
|
| 10 | C5739 |
Panasonic |
Silicon NPN Transistor |
|
| 11 | C5750 |
Renesas |
NPN SILICON RF TRANSISTOR |
|
| 12 | C5750X5R0J107M |
TDK |
Multilayer Ceramic Chip Capacitors |
|