C5720 - Toshiba Semiconductor

C5720 2SC5720

2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS · Low Saturation Voltage: VCE (sat) (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector.

Features

nit mA mA V hFE(1) (Note2) VCE = 1.5 V, IC = 0.5 A DC current gain hFE(2) (Note2) VCE = 1.5 V, IC = 2 A hFE(3) (Note2) VCE = 1.5 V, IC = 5 A Collector-Emitter saturation voltage Collector output capacitance VCE (sat) (Note2) Cob IC = 3 A, IB = 60 mA VCB = 10 V, IE = 0, f = 1 MHz Note2: Pulse test 1 2001-10-03 Free Datasheet http://www.datasheet4u.com/ 2SC5720 IC
  – VCE 5 60 30 20 10 8 3 6 4 2 2 1 1 Common-Emitter 1 Common-Emitter IC/IB = 50 Ta = 25°C VCE (sat)
  – IC 4 Collector-Emitter saturation voltage VCE (sat) (V) (A) Ta = 100°C 0.1 25°C -25°C Collector current IC 0.01 0 0 IB.