www.DataSheet4U.com Ordering number:ENN6283 NPN Triple Diffused Planar Silicon Transistor 2SC5388 High-Voltage Switching Applications Features · High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5388] 3.4 16.0 5.6 3.1 5.0.
· High speed (Adoption of MBIT process).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· On-chip damper diode.
Package Dimensions
unit:mm 2039D
[2SC5388]
3.4 16.0 5.6 3.1
5.0 8.0 21.0 22.0
20.4
2.8 2.0 1.0
4.0
2.0 0.6
1
2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Tc=25˚C
5.45
Conditi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5380 |
Panasonic Semiconductor |
2SC5380 | |
2 | C5381 |
Panasonic Semiconductor |
NPN Transistor | |
3 | C5383 |
Isahaya Electronics |
SMALL-SIGNAL TRANSISTOR | |
4 | C5386 |
Toshiba |
NPN TRANSISTOR | |
5 | C5386 |
Inchange Semiconductor |
NPN Power Transistor | |
6 | C5387 |
Toshiba Semiconductor |
2SC5387 | |
7 | C5300 |
Vectron International |
VCXO 9X14 J Leaded Surface Mount Package Reflow Process Compatible Optional ACMOS | |
8 | C5300 |
Sanyo |
2SC5300 | |
9 | C5301 |
Sanyo Semicon Device |
2SC5301 | |
10 | C5302 |
Sanyo Semicon Device |
2SC5302 | |
11 | C5303 |
Sanyo Semicon Device |
2SC5303 | |
12 | C5305 |
UTC |
2SC5305 |