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C5388 - Sanyo Semicon Device

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C5388 2SC5388

www.DataSheet4U.com Ordering number:ENN6283 NPN Triple Diffused Planar Silicon Transistor 2SC5388 High-Voltage Switching Applications Features · High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5388] 3.4 16.0 5.6 3.1 5.0.

Features


· High speed (Adoption of MBIT process).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5388] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C 5.45 Conditi.

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