TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 2SC5254 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure: NF = 1.5dB (f = 2 GHz) · High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Coll.
5 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 5 V, IC = 20 mA Cob VCB = 5 V, IE = 0, f = 1 MHz Cre (Note 2) ¾ ¾ 50 ¾ ¾ ¾1 ¾1 ¾ 160 0.5 ¾ 0.4 0.8 mA mA pF pF Note 1: hFE classification R: 50~100, O: 80~160 Note 2: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-24 Marking 2SC5254 2 2003-03-24 2SC5254 3 2003-03-24 2SC5.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5250 |
Renesas |
2SC5250 | |
2 | C5250 |
Vectron International |
VCXO 5X7 Surface Mount Package Reflow Process Compatible Optional ACMOS | |
3 | C5251 |
Hitachi Semiconductor |
2SC5251 | |
4 | C5252 |
Hitachi Semiconductor |
2SC5252 | |
5 | C5255 |
Toshiba |
2SC5255 | |
6 | C5258 |
Toshiba |
2SC5258 | |
7 | C5259 |
VI |
VCXO | |
8 | C5200 |
Toshiba |
Silicon NPN Transistor | |
9 | C5200N |
Toshiba |
NPN Transistor | |
10 | C5201 |
Toshiba |
2SC5201 | |
11 | C5206 |
Hitachi |
Silicon NPN Transistor | |
12 | C5207A |
Hitachi Semiconductor |
Silicon NPN Transistor |