C5195 - NEC

C5195 2SC5195

DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Supercompact Mini Mold Package .

Features

• Low Voltage Operation, Low Phase Distortion
• Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current IC = 100 mA
• Supercompact Mini Mold Package ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5195 2SC5195-T1 In-bulk products (50 pcs.) Taped products (3 Kpcs/Reel) Embossed tape 8 mm wide. Pin 3 (Collector) face to perforation side of the tape. Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAX.