DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Compact Mini Mold Package .
• Low Voltage Operation, Low Phase Distortion
• Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current IC = 100 mA
• 4-Pin Compact Mini Mold Package
ORDERING INFORMATION
PART NUMBER QUANTITY
PACKING STYLE
2SC5194-T1
3 Kpcs/Reel
Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape.
2SC5194-T2
3 Kpcs/Reel
Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation side of the tape.
Remark If you require an evaluation sample, please.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5191 |
NEC |
2SC5191 | |
2 | C5195 |
NEC |
2SC5195 | |
3 | C5196 |
Toshiba Semiconductor |
2SC5196 | |
4 | C5197 |
Toshiba Semiconductor |
2SC5197 | |
5 | C5198 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
6 | C5198 |
CDIL |
POWER TRANSISTORS | |
7 | C5199 |
Toshiba Semiconductor |
2SC5199 | |
8 | C5100 |
Sanken electric |
Silicon NPN Transistor | |
9 | C5101 |
Sanken electric |
2SC5101 | |
10 | C5103 |
ROHM Electronics |
2SC5103 | |
11 | C5104 |
Panasonic |
Silicon NPN Transistor | |
12 | C5106 |
Toshiba |
2SC5106 |