■■APPLICATION:FREQUENCY AMPLIFIER APPLICATION, C5147 —NPN silicon — ■■MAXIMUM RATINGS(Ta=25℃) PARAMETER SYMBOLRATING UNIT Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation (Ta=25℃) Collector Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature Range VCBO 300 V VCEO 300 .
c=0
0.2 1 V Ic=50 mA,IB= 5mA
50 100
MHz VCE= 30V,IE=-20 mA,f=30MHz
3 PF VCB= 30V, IE=0, f = 1MHz
■
■hFE Classification And Marking
Print Mark
C5147
Classification
D
hFE 100-150
E 150-200
.
TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package. / Features ,,。 High breakdown voltage, low collect.
Transistors Medium Power Transistor (Chroma Output) (300V, 0.1A) 2SC5147 2SC5147 !Features 1) High breakdown voltage. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5142 |
Toshiba Semiconductor |
2SC5142 | |
2 | C5143 |
Toshiba Semiconductor |
2SC5143 | |
3 | C5144 |
Toshiba Semiconductor |
2SC5144 | |
4 | C5148 |
Toshiba Semiconductor |
2SC5148 | |
5 | C5149 |
Toshiba Semiconductor |
2SC5149 | |
6 | C5100 |
Sanken electric |
Silicon NPN Transistor | |
7 | C5101 |
Sanken electric |
2SC5101 | |
8 | C5103 |
ROHM Electronics |
2SC5103 | |
9 | C5104 |
Panasonic |
Silicon NPN Transistor | |
10 | C5106 |
Toshiba |
2SC5106 | |
11 | C5107 |
Toshiba |
2SC5107 | |
12 | C5108 |
Toshiba |
2SC5108 |