C5121 - Panasonic Semiconductor

C5121 2SC5121

Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±0.5 • High collector-base voltage (Emitter open) VCBO 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open circuited) Cob • T.

Features

φ 3.16±0.1 3.8±0.3 11.0±0.5
• High collector-base voltage (Emitter open) VCBO 3.05±0.1
• High collector-emitter voltage (Base open) VCEO
• Small collector output capacitance (Common base, input open circuited) Cob
• TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 /
■ Absolute Maximum Ratings Ta = 25°C e ) Parameter Symbol Rating Unit c type Collector-base voltage (Emitter open) VCBO 400 V n d tage. ued Collector-emitter voltage (Base open) VCEO 400 V le s ontin Emitter-base voltage (Collector open) VEBO 7 V a elifecyc d.