www.DataSheet4U.net KSC5039F KSC5039F High Voltage Power Switch Switching Application 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (.
Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IC = 1mA, IC = 0 VCB = 500V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.3A IC = 2.5A, IB = 0.5A IC = 2.5A, IB = 0.5A VCE = 5V, IC = 0.1A VCB = 10V , f = 1MHz VCC=150V , IC = 2.5A, IB1 = -IB2 = 0.5A RL = 60Ω 10 40 1 3 0.8 10 1.5 2.0 V V MHz pF µs µs µs Min. 800 400 7 10 10 µA µA Typ. Max. Units V V
* Plus test: PW=300µs, Duty Cycle=2% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
www.DataSheet4U.net
KSC5039F
Typical Characteristics
2.0 1.8
IB = 180mA
IC[A], COLLECTOR CURRENT
1.6 1.4 1.2 1.0
hFE, DC C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5039 |
ETC |
2SC5039 | |
2 | C503 |
Toshiba Semiconductor |
2SC503 | |
3 | C5030 |
Toshiba Semiconductor |
2SC5030 | |
4 | C5032 |
Panasonic |
2SC5032 | |
5 | C5034 |
Panasonic |
Silicon NPN Transistor | |
6 | C5036 |
Panasonic Semiconductor |
2SC5036 | |
7 | C5036 |
Won-Top Electronics |
50A AVALANCHE AUTOMOTIVE CELL DIODE | |
8 | C5038 |
ETC |
Silicon NPN Transistor | |
9 | C503B-AAN |
CREE |
5-mm Red and Amber Round LEDs | |
10 | C503B-AAS |
CREE |
5-mm Red and Amber Round LEDs | |
11 | C503B-ABN |
CREE |
5-mm Red and Amber Round LEDs | |
12 | C503B-ABS |
CREE |
5-mm Red and Amber Round LEDs |