Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features 9.9±0.3 φ3.2±0.1 2.9±0.2 q High collector to emitter VCEO q High-speed switching q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 4.1±0.2 8.0±0.2 Sold.
9.9±0.3 φ3.2±0.1
2.9±0.2
q High collector to emitter VCEO q High-speed switching
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
4.1±0.2 8.0±0.2 Solder Dip
/ s Absolute Maximum Ratings (TC=25˚C)
15.0±0.3
3.0±0.2
1.2±0.15 1.45±0.15
2.6±0.1 0.7±0.1
e ) Parameter
Symbol
Ratings
Unit
+0.5
13.7
–0.2
c type Collector to base voltage
VCBO
500
V
n d tage. ued VCES
500
V
s tin Collector to emitter voltage
le on VCEO
400
V
a elifecyc disc Emitter to base voltage
VEBO
7
V
n u t ed, Peak collector current
ICP
15
A
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C503 |
Toshiba Semiconductor |
2SC503 | |
2 | C5030 |
Toshiba Semiconductor |
2SC5030 | |
3 | C5032 |
Panasonic |
2SC5032 | |
4 | C5036 |
Panasonic Semiconductor |
2SC5036 | |
5 | C5036 |
Won-Top Electronics |
50A AVALANCHE AUTOMOTIVE CELL DIODE | |
6 | C5038 |
ETC |
Silicon NPN Transistor | |
7 | C5039 |
ETC |
2SC5039 | |
8 | C5039F |
Fairchild Semiconductor |
KSC5039F | |
9 | C503B-AAN |
CREE |
5-mm Red and Amber Round LEDs | |
10 | C503B-AAS |
CREE |
5-mm Red and Amber Round LEDs | |
11 | C503B-ABN |
CREE |
5-mm Red and Amber Round LEDs | |
12 | C503B-ABS |
CREE |
5-mm Red and Amber Round LEDs |