·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1634 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage .
ACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 50μA; IE= 0 IC= 25mA; IB= 0 IE= 50μA; IC= 0 IC= 2A; IB= 0.2A B 2SC4007 MIN 100 80 6 TYP. MAX UNIT V V V 1.0 1.5 10 10 500 10 60 V V μA μA IC= 2A; IB= 0.2A B VCB= 100V; IE= 0 VEB= 6V; IC= 0 Current-Gain—Bandwidth P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C400 |
Intronice |
MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE | |
2 | C4001 |
NEC |
2SC4001 | |
3 | C4002 |
Sanyo Semicon Device |
2SC4002 | |
4 | C4002 |
ON Semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
5 | C4002 |
SEMTECH |
NPN Silicon Triple Diffused Planar Transistor | |
6 | C4002 |
Bluecolour |
NPN Silicon Triple Diffused Planar Transistor | |
7 | C4003 |
Sanyo |
2SC4003 | |
8 | C4004 |
Panasonic |
2SC4004 | |
9 | C4005 |
Sanyo |
2SC4005 | |
10 | C4006 |
Sanyo |
2SC4006 | |
11 | C4015 |
ROHM Electronics |
2SC4015 | |
12 | C4020 |
Allegro Micro Systems |
2SC4020 |