C4004 - Panasonic

C4004 2SC4004

Power Transistors 2SC4004 Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching ■ Features 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.1±0.1 • Wide safe operation area • Satisfactory linearity of forward curr.

Features

10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2
• High-speed switching
• High collector-base voltage (Emitter open) VCBO φ 3.1±0.1
• Wide safe operation area
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 /
■ Absolute Maximum Ratings TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+
  –00..12 Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 900 V c type Collector-emitter voltage (E-B short) VCES 900 V n d tage. ued Collector-emitter voltage (Base ope.