C3747 - INCHANGE

C3747 Silicon NPN Power Transistor

·Good Linearity of hFE ·High Switching Speed ·Low Collector Saturation Voltage ·Complement to Type 2SA1470 APPLICATIONS ·Inductance, lamp drivers ·Inverters, converters ·Power amplifiers ·High-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 .

Features

BO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.175A ICBO Collector Cutoff Current VCB= 40V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 3A , IB1= -IB2= 0.15A; RL= 6.67Ω; VCC= 20V MIN TYP. MAX UNIT 60 V 80 V 5V 0.4 V 100 μA 100 μA 70 280 100 MHz 0.1 μs 0.5 μs 0.1 μs  hFE Classifications QRS 70-140 .