C3743 - Panasonic Semiconductor

C3743 2SC3743

Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 4.2±0.2 ■ Features 5.5±0.2 2.7±0.2 • High-speed switching • Wide safe operation area and high breakdown voltage φ 3.1±0.1 • Satisfactory linearity of forward current transfer ratio h.

Features

5.5±0.2 2.7±0.2
• High-speed switching
• Wide safe operation area and high breakdown voltage φ 3.1±0.1
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 /
■ Absolute Maximum Ratings TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+
  –00..12 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 900 V c e. d ty Collector-emitter voltage (E-B short) VCES 900 V n d stag tinue Collector-emitter voltage (Base open) VCEO 800 V a e cle con Emitter-base vo.