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www.DataSheet4U.com WTE POWER SEMICONDUCTORS C35A – C35K Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indicated by Large Disc On Cathode Side, Add.
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indicated by Large Disc On Cathode Side, Add “R” Suffix to Indicate Reverse Polarity, i.e. C35AR Mounting Position: Any Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 2 B C35 Dim Min Max A — 6.30 B — 5.46 C 0.75 — D 1.0 — E — 2.2 All Dimensions in mm A Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or .
C35A - Digitron Semiconductors
C35 SERIES High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIER FEATUR.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C350 |
Powerex Power Semiconductors |
Phase Control SCR |
|
| 2 | C3500 |
ETC |
Silicon Power Transistor |
|
| 3 | C3502 |
Sanyo Semicon Device |
2SC3502 |
|
| 4 | C3503 |
Sanyo Semicon Device |
2SC3503 |
|
| 5 | C3504 |
Sanyo Semicon Device |
2SC3504 |
|
| 6 | C3505 |
SavantIC |
2SC3505 |
|
| 7 | C3506 |
Panasonic |
Silicon NPN Transistor |
|
| 8 | C3507 |
Panasonic |
2SC3507 |
|
| 9 | C3514 |
Inchange Semiconductor |
2SC3514 |
|
| 10 | C3515 |
Toshiba |
2SC3515 |
|
| 11 | C3518-Z |
Renesas |
SILICON POWER TRANSISTOR |
|
| 12 | C3519 |
Mospec Semiconductor |
2SC3519 |
|