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Ordering number:EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions unit:mm 2009A [2SA1381/2SC3503] · High breakdown voltage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=3.
Package Dimensions
unit:mm 2009A
[2SA1381/2SC3503]
· High breakdown voltage : VCEO≥300V.
· Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V.
· Adoption of MBIT process.
JEDEC : TO-126
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions
B : Base C : Collector E : Emitter
Ratings (
–)30.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C350 |
Powerex Power Semiconductors |
Phase Control SCR |
|
| 2 | C3500 |
ETC |
Silicon Power Transistor |
|
| 3 | C3502 |
Sanyo Semicon Device |
2SC3502 |
|
| 4 | C3504 |
Sanyo Semicon Device |
2SC3504 |
|
| 5 | C3505 |
SavantIC |
2SC3505 |
|
| 6 | C3506 |
Panasonic |
Silicon NPN Transistor |
|
| 7 | C3507 |
Panasonic |
2SC3507 |
|
| 8 | C3514 |
Inchange Semiconductor |
2SC3514 |
|
| 9 | C3515 |
Toshiba |
2SC3515 |
|
| 10 | C3518-Z |
Renesas |
SILICON POWER TRANSISTOR |
|
| 11 | C3519 |
Mospec Semiconductor |
2SC3519 |
|
| 12 | C3520 |
Won-Top Electronics |
35A AVALANCHE AUTOMOTIVE CELL DIODE |
|