ST 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta .
ase Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA at f=1KHz, RS=500Ω Symbol hFE hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT COB NF Min. 40 70 120 200 350 60 50 5 - - Typ. 0.15 200 2.5 4 Max. Unit 80 140 240 400 700 - -V -V -V 0.1 μA 0.1 μA 0.3 V - MHz - pF - dB SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company lis.
ST 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subd.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3331 |
Sanyo Semicon Device |
2SC3331 | |
2 | C3332 |
Sanyo Semicon Device |
2SC3332 | |
3 | C3333 |
Toshiba |
2SC3333 | |
4 | C3337 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
5 | C333C104K1R5CA7301 |
Kemet |
Multilayer Ceramic Capacitors | |
6 | C3300 |
SavantIC |
2SC3300 | |
7 | C3302 |
Toshiba Semiconductor |
2SC3302 | |
8 | C3303 |
Toshiba |
2SC3303 | |
9 | C3306 |
Toshiba Semiconductor |
2SC3306 | |
10 | C3306 |
INCHANGE |
Silicon NPN Power Transistor | |
11 | C3307 |
Toshiba |
2SC3307 | |
12 | C330Cxx |
NEC Tokin |
Inductors for Switching Power Supplies |