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C3330 - SEMTECH

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C3330 NPN Silicon Epitaxial Planar Transistor

ST 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta .

Features

ase Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA at f=1KHz, RS=500Ω Symbol hFE hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT COB NF Min. 40 70 120 200 350 60 50 5 - - Typ. 0.15 200 2.5 4 Max. Unit 80 140 240 400 700 - -V -V -V 0.1 μA 0.1 μA 0.3 V - MHz - pF - dB SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company lis.

The same part from a different manufacturer

Datasheet C3330 - PACO C3330

ST 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subd.

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