Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 4.0±0.2 2.0±0.2 Unit: mm 15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6 ■ Features 0.75 max. • Optimum for high-density mounting • Allowing supply with the radial taping • Low noise voltage NV ■ Absolute Maximum Ratings Ta = 25°C / Parame.
0.75 max.
• Optimum for high-density mounting
• Allowing supply with the radial taping
• Low noise voltage NV
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
60
V
c type Collector-emitter voltage (Base open) VCEO
55
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
7
V
le sta ntinu Collector current
IC
100
mA
a e cyc isco Peak collector current
ICP
200
mA
life d, d Collector power dissipation
PC
300
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg −5.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C331 |
OKI |
Printer User Guide | |
2 | C3310 |
Vectron International |
FCXO | |
3 | C3311 |
Panasonic |
Silicon NPN Transistor | |
4 | C3313 |
Panasonic |
Silicon NPN Transistor | |
5 | C3315 |
Panasonic |
Silicon NPN Transistor | |
6 | C3318 |
Fuji Electric |
2SC3318 | |
7 | C3300 |
SavantIC |
2SC3300 | |
8 | C3302 |
Toshiba Semiconductor |
2SC3302 | |
9 | C3303 |
Toshiba |
2SC3303 | |
10 | C3306 |
Toshiba Semiconductor |
2SC3306 | |
11 | C3306 |
INCHANGE |
Silicon NPN Power Transistor | |
12 | C3307 |
Toshiba |
2SC3307 |