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C3198 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW TO-92 Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO V.
Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW TO-92 Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 60 50 5 150 625 150 -55~+150 V V V mA mW oC oC 1. Emitter 2. Collector 3. Base Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage BVCBO IC= 100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC= .
C3198 - SEMTECH
ST 2SC3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdiv.
C3198 - ETC
2SC3198 | TRANSISTOR q Transistor NPN q Vceo 60V q Ic 0.15A q Potência 0.4W q Caixa TO-92 2SC3198 Transistor NPN. Vceo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C3192 |
Jing Hi-Tech |
NPN SIlicon |
|
| 2 | C3192 |
TIP |
NPN Transistor |
|
| 3 | C3194 |
TIP |
NPN Transistor |
|
| 4 | C3195 |
FGX |
NPN silicon |
|
| 5 | C3195 |
PACO |
NPN Silicon Epitaxial Planar Transistor |
|
| 6 | C3199 |
SeCoS |
NPN Transistor |
|
| 7 | C3199 |
JCST |
NPN Transistor |
|
| 8 | C3199 |
FGX |
NPN SILICON TRANSISTOR |
|
| 9 | C3199 |
JSL |
NPN SILICON TRANSISTOR |
|
| 10 | C3101 |
Mitsubishi Electronics |
2SC3101 |
|
| 11 | C3102 |
Mitsubishi Electric Semiconductor |
2SC3102 |
|
| 12 | C3112 |
Toshiba Semiconductor |
2SC3112 |
|
