2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications • • • High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emi.
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob NF (1) Noise figure NF (2) Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3113 |
Toshiba Semiconductor |
2SC3113 | |
2 | C3114 |
Sanyo Semicon Device |
2SC3114 | |
3 | C3116 |
Sanyo |
2SC3116 | |
4 | C3117 |
Sanyo Semicon Device |
2SC3117 | |
5 | C311C |
NEC |
UPC311C | |
6 | C3101 |
Mitsubishi Electronics |
2SC3101 | |
7 | C3102 |
Mitsubishi Electric Semiconductor |
2SC3102 | |
8 | C3120 |
Toshiba Semiconductor |
2SC3120 | |
9 | C3121 |
Toshiba |
2SC3121 | |
10 | C3122 |
Toshiba |
2SC3122 | |
11 | C3123 |
Toshiba Semiconductor |
2SC3123 | |
12 | C3124 |
Toshiba |
2SC3124 |