·With TO-220Fa package ·Low collector saturation voltage ·High breakdown voltge APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector cur.
rrent gain Transition frequency CONDITIONS IC=0.2A , L=25mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 8 MIN 400 www.datasheet4u.com 2SC3170 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.0 1.5 100 100 V V µA µA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=3A ; IB1=-IB2=0.6A VCC=100V 1.0 3.0 1.0 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SC3170 Fig.2 Outline dimensions (unindicat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C317 |
NEC |
UPC317 | |
2 | C3171 |
SavantIC |
2SC3171 | |
3 | C3176 |
Sanyo |
2SC3176 | |
4 | C3179 |
SavantIC |
2SC3179 | |
5 | C3101 |
Mitsubishi Electronics |
2SC3101 | |
6 | C3102 |
Mitsubishi Electric Semiconductor |
2SC3102 | |
7 | C3112 |
Toshiba Semiconductor |
2SC3112 | |
8 | C3113 |
Toshiba Semiconductor |
2SC3113 | |
9 | C3114 |
Sanyo Semicon Device |
2SC3114 | |
10 | C3116 |
Sanyo |
2SC3116 | |
11 | C3117 |
Sanyo Semicon Device |
2SC3117 | |
12 | C311C |
NEC |
UPC311C |