·With TO-126 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·Low power switching regulator ·DC-DC converter ·High voltage switch PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter vo.
e Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.3A; IB1=0.06A,L=10mH IC=300mA; IB=60mA IC=300mA; IB=60mA VCE=400V; VBE=-1.5V TC=125 VEB=5V; IC=0 IC=50mA ; VCE=5V IC=300mA ; VCE=5V 20 10 MIN 400 2SC2752 SYMBOL VCEO(SUS) VCEsat VBEsat ICEX IEBO hFE-1 hFE -2 TYP. MAX UNIT V 1.0 1.2 0.01 1.0 10 80 V V mA µA Switching times ton tstg tf Turn-on time Storage time Fall time IC=300mA; IB1=-IB2=60mA PW ?50µs;VCC?150V RL=500A 1.0 2.5 1.0 µs µs µs hFE-1 Classifications M 20-40 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2750 |
INCHANGE |
Silicon NPN Power Transistor | |
2 | C2751 |
Savant |
2SC2751 | |
3 | C2753 |
Toshiba |
2SC2753 | |
4 | C2756 |
NEC |
NPN Silicon Transistor | |
5 | C2703 |
Toshiba |
2SC2703 | |
6 | C2705 |
Toshiba Semiconductor |
2SC2705 | |
7 | C2710 |
Toshiba |
2SC2710 | |
8 | C2712 |
Toshiba |
Silicon NPN Transistors | |
9 | C2712 |
Weitron Technology |
2SC2712 | |
10 | C2712 |
WEJ |
NPN EPITAXIAL SILICON TRANSISTOR | |
11 | C2713 |
Toshiba |
2SC2713 | |
12 | C2714 |
Toshiba |
2SC2714 |