C2335F - Fairchild Semiconductor

C2335F KSC2335F

KSC2335F KSC2335F High Speed, High Voltage Switching • Industrial Use www.DataSheet4U.com NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base .

Features

* DC Current Gain Test Condition IC=3A, IB1=0.6A, L = 1mH IC=3A,IB1=-IB2=0.6A VBE(off)=-5V, L = 180µH, Clamped IC=6A, IB1=2A, IB2=-0.6A VBE(off)=-5V, L = 180µH, Clamped VCE=400V, IE = 0 VCE=400V, RBE = 51Ω @ TC = 125°C VCE=400V, VBE (off) = -1.5V VCE=400V, VBE(off) = -1.5V @ Ta=125°C VEB=5V, IC = 0 VCE=5V, IC = 0.1A VCE=5V, IC = 1A VCE=5V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCC=150V, IC=3A IB1=-IB2=0.6A RL=50Ω 20 20 10 Min. 400 450 400 10 1 10 1 10 80 1 1.2 1 2.5 1 V V µs µs µs Max. Units V V V µA mA µA mA µA
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage Turn ON T.