C2335 - SavantIC

C2335 2SC2335

·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high- speed ,power switching in inductive circuit, particularly suited for 115 and 220V switchmode applications such as.

Features

R Rth j-C Thermal resistance junction to case VALUE 500 400 7 7 15 3.5 40 150 -50~150 UNIT V V V A A A W MAX 3.125 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com Product Specification 2SC2335 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(SUS)CEO Collector-emitter sustaining voltage IC=3.0A ; IB1=0.6A,L=1mH VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A ICBO Collector cut-off current ICEX Collector cut-off current IEBO Emitter cut-off current VC.