·With TO-66 package ·Complement to type 2SA969 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specification 2SC2239 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-.
IC=10mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=500A; IB=50mA VBE Base-emitter on voltage IC=500mA ; VCE=5V ICBO Collector cut-off current VCB=160V ;IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=100mA ; VCE=5V Cob Output capacitance IE=0 ; VCB=10V,f=1MHz fT Transition frequency IC=100mA ; VCE=10V 160 V 5V 1.5 V 1.0 V 1.0 µA 1.0 µA 70 240 25 pF 100 MHz hFE Classifications OY 70-140 120-240 2 SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Prod.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2230 |
Toshiba |
2SC2230 | |
2 | C2233 |
Mospec Semiconductor |
2SC2233 | |
3 | C2235 |
Toshiba Semiconductor |
2SC2235 | |
4 | C2236 |
Toshiba Semiconductor |
2SC2236 | |
5 | C2238 |
Inchange Semiconductor |
2SC2238 | |
6 | C2206 |
Panasonic |
Silicon NPN Transistor | |
7 | C2209 |
Panasonic |
Silicon NPN Transistor | |
8 | C2216 |
Toshiba Semiconductor |
2SC2216 | |
9 | C2220Cxxxx |
Kemet Electronics |
Ceramic Chip Capacitors | |
10 | C2220H362JGGACTU |
KEMET |
Ceramic Chip Capacitors | |
11 | C2223 |
Renesas |
2SC2223 | |
12 | C2225Cxxxx |
Kemet Electronics |
Ceramic Chip Capacitors |