Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm Complementary to 2SA1254 ■ Features (0.4) 6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0) (1.0) 4.5±0.1 3.5±0.1 • Optimum for RF amplification of FM/AM radios R 0.9 • High transition frequency fT R 0.7 • M type package allowing easy automatic and manual insertion .
(0.4)
6.9±0.1 (1.5)
(1.5)
2.5±0.1 (1.0)
(1.0)
4.5±0.1
3.5±0.1
• Optimum for RF amplification of FM/AM radios
R 0.9
• High transition frequency fT
R 0.7
• M type package allowing easy automatic and manual insertion
as well as stand-alone fixing to the printed circuit board
4.1±0.2
/
■ Absolute Maximum Ratings Ta = 25°C
1.0±0.1
2.4±0.2
(0.85) 0.55±0.1
0.45±0.05
2.0±0.2
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
30
1.25±0.05
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
20
V
sta tinu Emitter-base voltage (Collector ope.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2209 |
Panasonic |
Silicon NPN Transistor | |
2 | C2216 |
Toshiba Semiconductor |
2SC2216 | |
3 | C2220Cxxxx |
Kemet Electronics |
Ceramic Chip Capacitors | |
4 | C2220H362JGGACTU |
KEMET |
Ceramic Chip Capacitors | |
5 | C2223 |
Renesas |
2SC2223 | |
6 | C2225Cxxxx |
Kemet Electronics |
Ceramic Chip Capacitors | |
7 | C2229 |
Toshiba |
Silicon NPN Transistor | |
8 | C2230 |
Toshiba |
2SC2230 | |
9 | C2233 |
Mospec Semiconductor |
2SC2233 | |
10 | C2235 |
Toshiba Semiconductor |
2SC2235 | |
11 | C2236 |
Toshiba Semiconductor |
2SC2236 | |
12 | C2238 |
Inchange Semiconductor |
2SC2238 |