www.DataSheet4U.com Transistors 2SC2062S High-gain Amplifier Transistor (32V, 0.3A) 2SC2062S zFeatures 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C) C B zExternal dimensions (Unit : mm) SPT 4.0 2.0 (15Min.) 3.0 3Min. (1)Emitter (2)Collector.
1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C) C B zExternal dimensions (Unit : mm) SPT 4.0 2.0 (15Min.) 3.0 3Min. (1)Emitter (2)Collector (3)Base 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 Taping specifications E : Emitter C : Collector B : Base E zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCES 40 32 Emitter-base voltage Collector current Collector power dissipation VEBO IC PC 12 0.3 0.3 Junction temper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2062 |
Yuejing |
NPN Transistor | |
2 | C2060 |
ETC |
2SC2060 | |
3 | C2061 |
Rohm |
2SC2061 | |
4 | C2063 |
Rohm |
2SC2063 | |
5 | C2068 |
Toshiba Semiconductor |
2SC2068 | |
6 | C2001 |
Micro Commercial Components |
2SC2001 | |
7 | C2002 |
NEC |
2SC2002 | |
8 | C2003 |
HR |
2.0mm Pitch Wire to Wire Connector | |
9 | C2003 |
NEC |
2SC2003 | |
10 | C200N50Z4 |
Anaren Microwave |
Surface Mount Termination | |
11 | C20100CT |
CITC |
Trench Schottky Rectifier | |
12 | C2012C0G1E103J |
TDK |
Multilayer Ceramic Chip Capacitors |