GuangDong Yuejing High Technology CO.,LTD. ■■APPLICATION:High-Gain Amplifier. C2062 —NPN silicon — ■■MAXIMUM RATING(Ta=25℃) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 10 V Collector current IC 300 mA Collector Power Dissipation PC 300 mW Junction Temperature.
100 MHz
Common Base Output Capacitance Cob
3.5 PF VCB= 30 V, IE=0, f = 1 MHz
B:Base
R2
C:Collector
■
■hFE Classification Classification hFE
4000~20K
E:Emitter
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2060 |
ETC |
2SC2060 | |
2 | C2061 |
Rohm |
2SC2061 | |
3 | C2062S |
Rohm |
2SC2062S | |
4 | C2063 |
Rohm |
2SC2063 | |
5 | C2068 |
Toshiba Semiconductor |
2SC2068 | |
6 | C2001 |
Micro Commercial Components |
2SC2001 | |
7 | C2002 |
NEC |
2SC2002 | |
8 | C2003 |
HR |
2.0mm Pitch Wire to Wire Connector | |
9 | C2003 |
NEC |
2SC2003 | |
10 | C200N50Z4 |
Anaren Microwave |
Surface Mount Termination | |
11 | C20100CT |
CITC |
Trench Schottky Rectifier | |
12 | C2012C0G1E103J |
TDK |
Multilayer Ceramic Chip Capacitors |