Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 .
• High collector-emitter voltage (Base open) VCEO
• High transition frequency fT
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
0.7±0.2 12.9±0.5
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage 2SC1473 VCBO
250
V
c type (Emitter open)
2SC1473A
300
n d tage. ued Collector-emitter voltage 2SC1473 VCEO
200
2.3±0.2
V
le s ntin (Base open)
2SC1473A
300
a elifecyc disco Emitter-base voltage (Collector open) VEBO
7
V
n u t ed, Collector current
IC
70
mA
duc typ Peak collector current
ICP
100
mA
te tin ur Pro tinued Collector power dissipation
PC
750
mW
fo on.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C1470 |
New Jersey Semi-Conductor |
2SC1470 | |
2 | C1472 |
Hitachi Semiconductor |
2SC1472 | |
3 | C1473A |
Panasonic Semiconductor |
2SC1473A | |
4 | C1474HA |
NEC |
UPC1474HA | |
5 | C147A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
6 | C147A |
Solid State |
SILICON CONTROLLED RECTIFIERS | |
7 | C147B |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
8 | C147B |
Solid State |
SILICON CONTROLLED RECTIFIERS | |
9 | C147C |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
10 | C147C |
Solid State |
SILICON CONTROLLED RECTIFIERS | |
11 | C147D |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
12 | C147D |
Solid State |
SILICON CONTROLLED RECTIFIERS |