C1472 - Hitachi Semiconductor

C1472 2SC1472

2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 www.DataSheet.net/ 2 1 1. Emitter 2. Collector 3. Base 3 2 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector curren.

Features

kdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio I CBO I EBO hFE1
* hFE2
* 2000 3000 3000 — — 50 — — hFE3
* 1 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time VCE(sat) VBE(sat) fT Cob t on V V MHz pF ns I C = 100 mA, IB = 0.1 mA I C = 100 mA, IB = 0.1 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 11 V I C = 100 IB1 = 100 mA I B2 =
  –IB1 Turn off time Storage time Note: hFE1 hFE2 hFE3 A t off t stg B — — 800 350 www.DataSheet.net/ — — ns ns 1. The.