C1004 - IMP Inc

C1004 Process C1004

® ISO 9001 Registered Process C1004 CMOS 1.0µ m 5 Volt Digital Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.55 74 0.60 7 10 Typical 0.75 0.60 87 0.75 0.8 T=25oC Unless .

Features

xide Thickness Field Oxide Thickness Poly Sheet Resistance Metal-1 Sheet Resistance Metal-2 Sheet Resistance Passivation Thickness Symbol ρN-well(f) ρN+ xjN+ ρP+ xjP+ TGOX TFIELD ρPOLY ρM1 ρM2 TPASS Minimum 0.8 20 60 15 Typical 1.0 35 0.45 80 0.5 20 700 22 50 30 200+900 Maximum 1.22 50 100 30 Unit KΩ/ Ω/ µm Ω/ µm nm nm Ω/ mΩ/ mΩ/ nm Comments n-well oxide+nit. Capacitance Gate Oxide Metal-1 to Poly1 Metal-1 to SIlicon Metal-2 to Metal-1 Symbol Cox CM1P CMIS CMM Minimum 1.52 Typical 1.64 0.046 0.028 0.038 Maximum 1.82 Unit fF/µm2 fF/µm2 fF/µm2 fF/µm2 Comments © IMP, Inc. 17 Pr.