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C1004 |
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| Part Number | C1004 |
| Manufacturer | IMP Inc |
| Description | ® ISO 9001 Registered Process C1004 CMOS 1.0µ m 5 Volt Digital Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachm... |
| Features |
xide Thickness Field Oxide Thickness Poly Sheet Resistance Metal-1 Sheet Resistance Metal-2 Sheet Resistance Passivation Thickness
Symbol ρN-well(f) ρN+ xjN+ ρP+ xjP+ TGOX TFIELD ρPOLY ρM1 ρM2 TPASS
Minimum 0.8 20 60
15
Typical 1.0 35 0.45 80 0.5 20 700 22 50 30 200+900
Maximum 1.22 50 100
30
Unit KΩ/ Ω/ µm Ω/ µm nm nm Ω/ mΩ/ mΩ/ nm
Comments n-well
oxide+nit.
Capacitance Gate Oxide Metal-1 to Poly1 Metal-1 to SIlicon Metal-2 to Metal-1
Symbol Cox CM1P CMIS CMM
Minimum 1.52
Typical 1.64 0.046 0.028 0.038
Maximum 1.82
Unit fF/µm2 fF/µm2 fF/µm2 fF/µm2
Comments
© IMP, Inc.
17
Pr... |
| Document |
 C1004 Data Sheet
PDF 32.00KB |
| Distributor | Stock | Price | Buy |
|---|
