Power Dissipation Junction Temperature Storage Temperature Thermal Resistance - Junction to Ambient in free air SYMBOL PTA Tj Tstg Rth(j-a) VALUE 500 175 - 55 to +175 300 UNIT mW °C °C °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) Forward Voltage @ IF=200mA VF < 1.2 V Device VZT @ IZT* BZX83C 2V7 BZX83C 3V0 BZX83C 3V3 BZX83C 3.
C 22 BZX83C 24 BZX83C 27
min (V) 2.50 2.80 3.10 3.40 3.70 4.00 4.40 4.80 5.20 5.80 6.40 7.00 7.70 8.50 9.40 10.40 11.40 12.40 13.80 15.30 16.80 18.80 20.80 22.80 25.10
rZT @ IZT
*
IZT
max (V) 2.90 3.20 3.50 3.80 4.10 4.60 5.00 5.40 6.00 6.60 7.20 7.90 8.70 9.60 10.60 11.60 12.70 14.10 15.60 17.10 19.10 21.20 23.30 25.60 28.90
max (Ω) 90 90 90 90 90 80 80 60 40 10 8 7 7 10 15 20 20 25 30 40 55 55 58 80 80
(mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0
rZK @ IZK
max (Ω) 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 1.
BZX83C SILICON EPITAXIAL PLANAR ZENER DIODES The Zener voltages are graded according to the international E 24 standard..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BZX83C10 |
CDIL |
SILIICON PLANAR ZENER DIODES | |
2 | BZX83C10 |
SEMTECH |
SILICON EPITAXIAL PLANAR ZENER DIODES | |
3 | BZX83C10RL |
Motorola Inc |
500 mW DO-35 Glass Zener Voltage Regulator Diodes | |
4 | BZX83C11 |
CDIL |
SILIICON PLANAR ZENER DIODES | |
5 | BZX83C11 |
SEMTECH |
SILICON EPITAXIAL PLANAR ZENER DIODES | |
6 | BZX83C11RL |
Motorola Inc |
500 mW DO-35 Glass Zener Voltage Regulator Diodes | |
7 | BZX83C12 |
CDIL |
SILIICON PLANAR ZENER DIODES | |
8 | BZX83C12 |
SEMTECH |
SILICON EPITAXIAL PLANAR ZENER DIODES | |
9 | BZX83C12RL |
Motorola Inc |
500 mW DO-35 Glass Zener Voltage Regulator Diodes | |
10 | BZX83C13 |
CDIL |
SILIICON PLANAR ZENER DIODES | |
11 | BZX83C13 |
SEMTECH |
SILICON EPITAXIAL PLANAR ZENER DIODES | |
12 | BZX83C13RL |
Motorola Inc |
500 mW DO-35 Glass Zener Voltage Regulator Diodes |