BZX83C10 - CDIL

BZX83C10 SILIICON PLANAR ZENER DIODES

Power Dissipation Junction Temperature Storage Temperature Thermal Resistance - Junction to Ambient in free air SYMBOL PTA Tj Tstg Rth(j-a) VALUE 500 175 - 55 to +175 300 UNIT mW °C °C °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) Forward Voltage @ IF=200mA VF < 1.2 V Device VZT @ IZT* BZX83C 2V7 BZX83C 3V0 BZX83C 3V3 BZX83C 3.

Features

C 22 BZX83C 24 BZX83C 27 min (V) 2.50 2.80 3.10 3.40 3.70 4.00 4.40 4.80 5.20 5.80 6.40 7.00 7.70 8.50 9.40 10.40 11.40 12.40 13.80 15.30 16.80 18.80 20.80 22.80 25.10 rZT @ IZT
* IZT max (V) 2.90 3.20 3.50 3.80 4.10 4.60 5.00 5.40 6.00 6.60 7.20 7.90 8.70 9.60 10.60 11.60 12.70 14.10 15.60 17.10 19.10 21.20 23.30 25.60 28.90 max (Ω) 90 90 90 90 90 80 80 60 40 10 8 7 7 10 15 20 20 25 30 40 55 55 58 80 80 (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 rZK @ IZK max (Ω) 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 1.