Glass passivated high efficiency rectifier diodes in full pack, plastic envelopes, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYW29F series QUICK REFER.
age1 Average forward current2 square wave; δ = 0.5; Ths ≤ 106 ˚C sinusoidal; a = 1.57; Ths ≤ 109 ˚C CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 8 7.3 11.3 16 80 88 32 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s ˚C ˚C IF(RMS) IFRM IFSM I2t Tstg Tj RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Ths ≤ 109 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature 1 Ths ≤ 141˚C for thermal stability. 2 Neglecting switching and reverse.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BYW29F-100 |
NXP |
Rectifier diodes ultrafast | |
2 | BYW29F-200 |
NXP |
Rectifier diodes ultrafast | |
3 | BYW29F-200 |
STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES | |
4 | BYW29F |
NXP |
Rectifier diodes ultrafast | |
5 | BYW29FP-200 |
STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES | |
6 | BYW29 |
NXP |
Rectifier diodes ultrafast | |
7 | BYW29-100 |
NXP |
Rectifier diodes ultrafast | |
8 | BYW29-100 |
General Semiconductor |
FAST EFFICIENT PLASTIC RECTIFIER | |
9 | BYW29-100 |
Vishay |
Ultrafast Rectifier | |
10 | BYW29-150 |
NXP |
Rectifier diodes ultrafast | |
11 | BYW29-150 |
General Semiconductor |
FAST EFFICIENT PLASTIC RECTIFIER | |
12 | BYW29-150 |
Vishay |
Ultrafast Rectifier |