Glass passivated high efficiency rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYW29 series QUICK REFERENCE DATA S.
ge Average forward current1 square wave; δ = 0.5; Tmb ≤ 128 ˚C sinusoidal; a = 1.57; Tmb ≤ 130 ˚C CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 8 7.3 11.3 16 80 88 32 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s ˚C ˚C IF(RMS) IFRM IFSM I2t Tstg Tj RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 128 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature 1 Neglecting switching and reverse current losses October 1994 1 Rev 1.10.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BYW25 |
Philips |
FAST SOFT-RECOVERY RECTIFIER DIODE | |
2 | BYW27-100 |
EIC discrete Semiconductors |
SILICON RECTIFIERS | |
3 | BYW27-100 |
Diotec Semiconductor |
Silicon Rectifiers | |
4 | BYW27-100 |
Semikron |
Standard silicon rectifier diodes | |
5 | BYW27-100 |
SYNSEMI |
SILICON RECTIFIER DIODES | |
6 | BYW27-1000 |
Diotec Semiconductor |
Silicon Rectifiers | |
7 | BYW27-1000 |
Semikron |
Standard silicon rectifier diodes | |
8 | BYW27-1000 |
SYNSEMI |
SILICON RECTIFIER DIODES | |
9 | BYW27-100GP |
Vishay |
Glass Passivated Junction Rectifier | |
10 | BYW27-200 |
EIC discrete Semiconductors |
SILICON RECTIFIERS | |
11 | BYW27-200 |
Diotec Semiconductor |
Silicon Rectifiers | |
12 | BYW27-200 |
Semikron |
Standard silicon rectifier diodes |