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BYW27-100GP, BYW27-200GP, BYW27-400GP, BYW27-600GP, BYW27-800GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Rectifier SUPERECTIFIER® DO-41 (DO-204AL) FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge c.
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
trr IR VF TJ max. Package
1.0 A 100 V, 200 V, 400 V, 600 V, 800 V
30 A 3.0 μs 200 nA 1.0 V 175 °C DO-41 (DO-204AL)
Circuit configuration
Single
TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverte.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BYW27-100 |
EIC discrete Semiconductors |
SILICON RECTIFIERS |
|
| 2 | BYW27-100 |
Diotec Semiconductor |
Silicon Rectifiers |
|
| 3 | BYW27-100 |
Semikron |
Standard silicon rectifier diodes |
|
| 4 | BYW27-100 |
SYNSEMI |
SILICON RECTIFIER DIODES |
|
| 5 | BYW27-1000 |
Diotec Semiconductor |
Silicon Rectifiers |
|
| 6 | BYW27-1000 |
Semikron |
Standard silicon rectifier diodes |
|
| 7 | BYW27-1000 |
SYNSEMI |
SILICON RECTIFIER DIODES |
|
| 8 | BYW27-200 |
EIC discrete Semiconductors |
SILICON RECTIFIERS |
|
| 9 | BYW27-200 |
Diotec Semiconductor |
Silicon Rectifiers |
|
| 10 | BYW27-200 |
Semikron |
Standard silicon rectifier diodes |
|
| 11 | BYW27-200 |
SYNSEMI |
SILICON RECTIFIER DIODES |
|
| 12 | BYW27-200GP |
Vishay |
Glass Passivated Junction Rectifier |
|