BYV133F-45 - NXP

BYV133F-45 Rectifier diodes schottky barrier

Dual, low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope featuring low forward voltage drop, absence of stored charge. and guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are importa.

Features

35 35 35 MAX. -40 40 40 40 20 20 20 100 110 -45 45 45 45 UNIT V V V A A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Ths ≤ 112 ˚C Average output current (both diodes conducting) RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode square wave; δ = 0.5; Ths ≤ 61 ˚C I2t IRRM IRSM Tstg Tj t = 25 µs; δ = 0.5; Ths ≤ 61 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRRM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = .